Lithography

FuG Elektronik GmbH, Florianstraße 2, 83024 Rosenheim, GERMANY

In principle an electron beam lithography plant is similar to a scanning electron microscope. While by microscopy the materials shall be only examined and not changed, but for lithography the electron beam must show the necessary energy density to treat the material. The requirements on the stability of the high voltage are like high like in the microscopy.

Unlike the optical lithography, the electron beam is able to produce smaller structures, so that semiconductor devices with a higher packaging density are possible. Exposure masks for optical lithography are also often produced by means of electron beam lithography.

Principle:

Example:

HCV 23M - 6500: High voltage supply for electron beam lithography

Primary voltage:	0 - 6kV, 0 - 500µA
Extractor voltage:	0 - ±500V, max.
Supressor voltage:	0 - ±500V, max.
Filament:	6 - 10V, max. 2A

zur deutschen Version

03.12.07 14:48

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Telefax +49 8031 81099
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